tm september 2008 fdn5632n _f085 n-channel logi c level powertrench ? mosfet ? 2008 fairchild semiconductor corporation fdn5632n _f085 rev. a (w) www.fairchildsemi.com 1 fdn5632n_f085 n-channel logic level powertrench ? mosfet 60v, 1.6a, 98 m ? features ? r ds(on) = 98m ? at v gs = 4.5v, i d = 1.6a ? r ds(on) = 82m ? at v gs = 10v, i d = 1.7a ? typ q g(tot) = 9.2nc at v gs = 10v ? low miller charge ? qualified to aec q101 applications ? dc/dc converter ? motor drives ? rohs compliant
fdn5632n _f085 n-channel logi c level powertrench ? mosfet fdn5632n _f085 rev. a (w) www.fairchildsemi.com 2 mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 60 v v gs gate to source voltage 20 v i d drain current continuous (v gs = 10v) 1.7 a pulsed 10 p d power dissipation 1.1 w t j , t stg operating and storage temperature -55 to +150 o c r jc thermal resistance junction to case 75 o c/w r ja thermal resistance junction to ambient to-252, 1in 2 copper pad area 111 o c/w package marking and ordering information device marking device package reel size tape width quantity 5632 f dn5632n _f085 ssot3 7? 8mm 3000 units electrical characteristics t a = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 60 - - v i dss zero gate voltage drain current v ds = 48v, - - 1 a v gs = 0v t a = 125 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a12.03v r ds(on) drain to source on resistance i d = 1.7a, v gs = 10v - 57 82 m ? i d = 1.6a, v gs = 6v - 62 88 i d = 1.6a, v gs = 4.5v 70 98 i d = 1.7a, v gs = 10v, t a = 150 o c -107135 c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 475 - pf c oss output capacitance - 60 - pf c rss reverse transfer capacitance - 30 - pf r g gate resistance f = 1mhz - 1.4 - ? q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 1.7a - 9.2 12 nc q gs gate to source gate charge -1.5-nc q gd gate to drain ?miller? charge - 1.4 - nc
fdn5632n _f085 n-channel logi c level powertrench ? mosfet fdn5632n _f085 rev. a (w) www.fairchildsemi.com 3 electrical characteristics t a = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t on turn-on time v dd = 30v, i d = 1.0a v gs = 10v, r gen = 6 ? - - 30 ns t d(on) turn-on delay time - 15 - ns t r rise time - 1.7 - ns t d(off) turn-off delay time - 5.2 - ns t f fall time - 1.3 - ns t off turn-off time - - 12.9 ns v sd source to drain diode voltage i sd = 1.7a - 0.8 1.25 v i sd = 0.85a - 0.8 1.0 t rr reverse recovery time i sd = 1.7a, di sd /dt = 100a/ s - 16.0 21 ns q rr reverse recovery charge - 7.9 10.3 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification.
fdn5632n _f085 n-channel logi c level powertrench ? mosfet fdn5632n _f085 rev. a (w) www.fairchildsemi.com 4 typical characteristics figure 1. normalized power dissipation vs ambient temperature 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t a , ambient temperature ( o c ) figure 2. maximum continuous drain current vs ambient temperature 25 50 75 100 125 150 0 1 2 3 r ja = 111 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t a , ambient temperature ( o c ) current limited by package figure 3. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 0.01 0.1 1 single pulse r ja = 111 o c / w d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z ja t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -3 10 -2 10 -1 11010 2 10 3 10 4 1 10 100 single pulse r ja = 111 o c / w v gs = 10v i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 25 150 - t c 125 for temperatures above 25 o c derate peak current as follows:
fdn5632n _f085 n-channel logi c level powertrench ? mosfet fdn5632n _f085 rev. a (w) www.fairchildsemi.com 5 figure 5. 0.01 0.1 1 10 100 300 0.001 0.01 0.1 1 10 30 1s 100ms 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c dc forward bias safe operating area figure 6. 012345 0 3 6 9 12 t j = -55 o c t j = 25 o c t j = 150 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 7. 01234 0 3 6 9 12 v gs = 4v v gs = 10v v gs = 6v v gs = 3.5v v gs = 4.5v v gs = 5v v gs = 3v pulse duration = 80 s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 8. drain to source on-res i stance 246810 0 50 100 150 200 i d = 1.7a pulse duration = 80 s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m ? ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 150 o c variation vs gate to source voltage figure 9. normalized drain to source on -80 -40 0 40 80 120 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulse duration = 80 s duty cycle = 0.5% max i d = 1.7a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) resistance vs junction temperature f i g u r e 1 0 . n o r m a l i z e d g a t e t h r e s h o l d voltage vs -80 -40 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature ( o c ) junction temperature typical characteristics
fdn5632n _f085 n-channel logi c level powertrench ? mosfet fdn5632n _f085 rev. a (w) www.fairchildsemi.com 6 figure 11. normalized drain to source -80 -40 0 40 80 120 160 0.90 0.95 1.00 1.05 1.10 1.15 i d = 250 a normalized drain to source breakdown voltage t j , junction temperature ( o c ) breakdown voltage vs junction temperature figure 12. capacitance vs drain to source 0.1 1 10 50 10 100 1000 f = 1mhz v gs = 0v c rss c oss c iss v ds , drain to source voltage ( v ) capacitance (pf) voltage figure 13. 036912 0 2 4 6 8 10 i d = 1.7a v dd = 40v v dd = 20v v dd = 30v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics
fdn5632n _f085 rev. a (w) www.fairchildsemi.com 7 fdn5632n_f085 n-channel logic level powertrench ? mosfet rev. i36 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting poli cy. farichild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? 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coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only.
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